MHQ2222 semelab plc reserves the right to change test condi tions, parameter limits and package dimensions with out notice. information furnished by semelab is bel ieved to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility fo r any errors or omissions discovered in its use. se melab encourages customers to verify that datasheets are current before placing orders. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk doc 7964, iss 1 mechanical data dimensions in mm (inches) absolute maximum ratings ( t c = 25c unless otherwise stated) v ceo collector - emitter voltage 40v v cbo collector - base voltage 60v v ebo emitter ? base voltage 5v i c collector current - continuous 500ma each transistor total device p d power dissipation at t a = 25c 0.65w 1.9w derate above 25c 3.72mw/c 10.88mw/c t j junction temperature 200c t stg storage temperature -65 to +200c quad dual-in-line n p n silicon transistor s applications ? general purpose switching ? dc to vhf amplifiers features ? v (br)ceo = 40v (min) ? hermetic package ? screening options available 0.457 0.102 (0.018 0.004) 2.134 (0.084) 0.508 (0.020) min. 1.422 0.102 (0.056 0.004) 1 7 14 8
MHQ2222 semelab plc reserves the right to change test condi tions, parameter limits and package dimensions with out notice. information furnished by semelab is bel ieved to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility fo r any errors or omissions discovered in its use. se melab encourages customers to verify that datasheets are current before placing orders. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk doc 7964, iss 1 electrical characteristics (t c =25c unless otherwise stated) parameter test conditions min. typ. max. unit v (br)ceo * collector-emitter breakdown voltage i c = 10ma i b = 0 40 v (br)cbo collector-base breakdown voltage i c = 10 a i e = 0 60 v (br)ebo emitter-base breakdown voltage i e = 10 a i c = 0 5 v i cbo collector-base cut-off current i e = 0 v cb = 50v 50 i ebo emitter-base cut-off current i c = 0 v eb = 3v 50 na i c = 10ma v ce = 10v 75 i c = 150ma v ce = 10v 100 h fe * forward-current transfer ratio i c = 300ma v ce = 10v 30 v ce(sat) * collector-emitter saturation voltage i c = 150ma i b = 15ma 0.4 i c = 300ma i b = 30ma 1.6 v be(sat) * base-emitter saturated voltage i c = 150ma i b = 15ma 1.3 i c = 300ma i b = 30ma 2.5 v dynamic characteristics i c = 20ma v ce = 20v f t transition frequency f = 100mhz 200 mhz i e = 0 v cb = 10v c obo output capacitance f = 1.0mhz 8 i c = 0 v eb = 0.5v c ibo input capacitance f = 1.0mhz 30 pf v cc = 30v v be(off) = 0.5v t on turn-on time i c = 150ma i b1 = 15ma 25 v cc = 30v t off turn-off time i c = 150ma i b1 = i b2 = 15ma 250 ns * pulse test t p = 300 s, < 2%
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